From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultra-thin gate oxide

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 201-206

  Ceschia, M ^a   Paccagnella, A ^b   Cester, A ^c   Ghidini, G ^a   Wyss, J ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b INFM   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON IRRADIATION; ENERGY TRANSFER; IONIZING RADIATION; LEAKAGE CURRENTS; OXIDES; ULTRATHIN FILMS;

LINEAR ENERGY TRANSFER (LET); RADIATION INDUCED LEAKAGE CURRENTS (RILC); SOFT-BREAKDOWN PHENOMENON; ULTRATHIN GATE OXIDES;

MOS DEVICES;

EID: 0034512753     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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