Soft breakdown current noise in ultra-thin gate oxides

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 1019-1025

  Cester, A ^a   Bandiera, L ^a   Ghidini, G ^b   Bloom, I ^c   Paccagnella, A ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c Industrial Park   (Israel)

Author keywords

Constant current stress; Integrated circuit reliability; MOS devices; Semiconductor devices reliability; Silicon material devices; Soft breakdown

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; MOS DEVICES; NATURAL FREQUENCIES; POISSON DISTRIBUTION; SPURIOUS SIGNAL NOISE; ULTRATHIN FILMS;

ULTRA-THIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036642864     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00036-9     Document Type: Conference Paper

References (12)

1. Mechanism for stress-induced leakage current in thin silicon dioxide films
2. 2 films
3. Thickness dependence of stress-induced leakage current in silicon dioxide
4. Soft breakdown conduction in ultra-thin (3-5 nm) gate dielectrics
5. Soft breakdown of ultra-thin gate oxide layers
6. Random telegraph signal in the quasi-breakdown current of MOS capacitors
7. 2 films under constant current stress
8. Are soft breakdown and hard breakdown of ultra-thin gate oxides actually different failure mechanisms
9. Modeling of soft breakdown spots in silicon dioxide films as point contacts
10. Point contact conduction at the oxide breakdown of MOS devices
11. A detailed study of soft- and presoft-breakdowns in small geometry MOS structures
12. Trap assisted tunneling as a mechanism of degradation and noise in 2-5 nm oxides