GaN HFETs with excellent low noise performance at low power levels through the use of thin AlGaN Schottky barrier layer

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 581-584

  Hussain, T ^a   Kurdoghlian, A ^a   Hashimoto, P ^a   Wong, W S ^a   Wetzel, M ^a   Moon, J S ^a   McCray, L ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; HALL EFFECT; PERFORMANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

ALUMINUM GALLIUM NITRIDE SCHOTTKY BARRIER LAYER; CHARGE DENSITY; GALLIUM NITRIDE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0035714852     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Special issue on group III-N semiconductor devices
2. Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications
3. Low-frequency noise in AlGaN-Gan doped-channel heterostructure field effect transistors grown on insulating SiC substrates
4. Robust low microwave noise GaN MODFETs with 0.6 dB noise figure at 10GHz