Expérimental evaluation of microwave field-effect-transistor noise models

IEEE Transactions on Microwave Theory and Techniques

Volumn 47, Issue 2, 1999, Pages 156-163

  Rudolph, Peter Heymannmatthias ^a,b   Prinzler, Helmut ^a,b   Doerner, Ralf ^a,b   Klapproth, Lars ^a,b   Bock, Georg ^a,b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

FET; GaAs; Microwave; Noise

Indexed keywords

EQUIVALENT CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

MICROWAVE FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0033079261     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.744290     Document Type: Article

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