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Volumn 47, Issue 12, 1999, Pages 2358-2363

A general parameter-extraction method for transistor noise models

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMIZATION; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

EID: 0033281708     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.808982     Document Type: Article
Times cited : (14)

References (12)
  • 11
    • 33747238430 scopus 로고    scopus 로고
    • Zirath, "Characterization and modeling of noise parameters of SiC MESFET's," unpublished.
    • J. Eriksson, N. Rorsman, P.-A. Nilsson, and H. Zirath, "Characterization and modeling of noise parameters of SiC MESFET's," unpublished.
    • N. Rorsman, P.-A. Nilsson, and H.
    • Eriksson, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.