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IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 501-506

Noise spectroscopy of traps in GaN devices

(2) Balandin, A a Wang, K L a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL NOISE MEASUREMENT;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; LOW FREQUENCY NOISE MEASUREMENT; NOISE SPECTROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 0034424964 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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