Intrinsic noise characteristics of AlGaN/GaN HEMTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1415-1418

  Lee, Sungjae ^a   Tilak, Vinayak ^b   Webb, Kevin J ^a   Eastman, Lester F ^b  

^a PURDUE UNIVERSITY   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE MEASUREMENT; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; EQUIVALENT CIRCUITS; FREQUENCIES; GALLIUM NITRIDE; MATHEMATICAL MODELS; MATRIX ALGEBRA; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL CONDUCTIVITY; WHITE NOISE;

BREAKDOWN FIELD; MICROWAVE NOISE; NOISE DEEMBEDDING; NOISE FIGURE; NOISE PARAMETERS; NOISE SOURCES; POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036065966     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012120     Document Type: Article

References (14)

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2. Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors
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5. Theory of noisy fourpoles
6. Noise characteristics of gallium arsenide field-effect transistors
7. Noise modeling and measurement techniques
8. Modeling of noise paramters of MESFET’s and MODFET’s and their frequency and dependence
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11. An efficient method for computer aided noise analysis of linear amplifier networks
12. Nyquist’s and Thevenin’s theorems generalized for nonreciprocal linear networks
13. The impedance field method of noise calculation in active semiconductor devices