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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 5 A, 2003, Pages 2829-2833

Substrate-polarity dependence of AlN single-crystal films grown on 6H-SiC(0001) and (0001̄) by molecular beam epitaxy

(4) Harada, Masashi a Ishikawa, Yukari a Saito, Tomohiro a Shibata, Noriyoshi a

Author keywords

6H SiC; AlN; Molecular beam epitaxy; Polarity; Scanning electron microscopy; Transmission electron microscopy; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM NITRIDE; FILM GROWTH; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

LINEAR DENTS;

SEMICONDUCTING FILMS;

EID: 0038035223 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.2829 Document Type: Article

Times cited : (8)

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