Theory of the AlN/SiC(101¯0) interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 15, 1997, Pages 9213-9216

  Di Felice, R ^a   Northrup, J ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038533597     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.9213     Document Type: Article

References (14)

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10. The surface energy of unstrained AlN(101¯0) is given with respect to unstrained bulk AlN. The formation energies in Table II are relative to atom reservoirs consisting of bulk SiC and strained bulk AlN. The strain energy of AlN due to the substrate constraints has been calculated from first principles: it is about 9 meV/(AlN bilayer). Such a small value of the strain energy should not be a decisive factor inhibiting the formation of AlN films on SiC. The strain energy obtained through macroscopic elastic theory (Formula presented) using the experimental strains in Table I and experimental elastic constants [L. E. McNeil, M. Grimsditch, and R. H. French, J. Am. Ceram. Soc. 76, 1132 (1993)] is 12 meV/(AlN bilayer).
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