Reactive UHV sputtering and structural characterization of epitaxial AlN/6H-SiC(0001) thin films

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1225-1228

  Tungasmita, S ^a   Birch, J ^a   Hultman, L ^a   Janzen E ^a   Sundgren, J E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

6H SiC; AlN; HRTEM; SIMS; Sputtering; Thin Films; XRD

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; MAGNETRON SPUTTERING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 11644305364     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1225     Document Type: Article

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