Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 747-755

  Liaw, H M ^a   Doyle, R ^a   Fejes, P L ^a   Zollner, S ^a   Konkar, A ^a   Linthicum, K J ^b   Gehrke, T ^b   Davis, R F ^b  

^a MOTOROLA INC   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTAL MICROSTRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES;

ALUMINUM NITRIDE FILMS; BUFFER LAYERS; CRYSTALLINITY;

SEMICONDUCTING FILMS;

EID: 0033899896     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00307-X     Document Type: Article

References (8)

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7. Hong SQ, Liaw HM, Linthicum K, Davis RF, Fejes P, Zollner S, Kottke M. MRS Symp Proc, 1999. 572. p. 407.
8. Liaw HM, Hong SQ, Linthicum K, Davis RF, Fejes P. MRS Symp Proc, 1999. 572. p. 219.