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Volumn 26, Issue 12, 1997, Pages 1389-1393

X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)

Author keywords

Chemical vapor deposition (CVD); High resolution transmission electron microscopy (HRTEM); SiC AlN

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; FILM PREPARATION; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0031366386     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0056-1     Document Type: Article
Times cited : (8)

References (17)
  • 1
    • 0003581890 scopus 로고
    • ed. M.A. Prelas, P. Gielisse, G. Popovici, B.V. Spitsyn and T. Stacy Dordrecht, The Netherlands: Kluwer Academic
    • T. Stacy, B.Y. Liaw, A.M. Khan and G.Zhao, Wide Band Gap Electronic Materials, ed. M.A. Prelas, P. Gielisse, G. Popovici, B.V. Spitsyn and T. Stacy (Dordrecht, The Netherlands: Kluwer Academic, 1995), p. 475.
    • (1995) Wide Band Gap Electronic Materials , pp. 475
    • Stacy, T.1    Liaw, B.Y.2    Khan, A.M.3    Zhao, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.