Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 68-72

  Rost, H J ^a   Siche, D ^a   Dolle, J ^a   Eiserbeck, W ^a   Muller T ^a   Schulz, D ^a   Wagner, G ^a   Wollweber, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

6H SiC; Crystal growth; Modified LELY method

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

LELY METHOD;

SILICON CARBIDE;

EID: 0032684893     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00447-4     Document Type: Article

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