Near-thermal equilibrium growth of SiC by physical vapor transport

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 44-47

  Schulze, Norbert ^a   Barrett, Donovan L ^a   Pensl, Gerhard ^a   Rohmfeld, Stefan ^a   Hundhausen, Martin ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Defects; Electronic properties; Raman; Silicon carbide; Sublimation growth

Indexed keywords

CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRONIC PROPERTIES; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STRESS ANALYSIS; SUBLIMATION; THERMODYNAMIC STABILITY;

HALL MOBILITY; MICROPIPES; PHYSICAL VAPOR TRANSPORT (PVT); SEMICONDUCTOR BOULES; SUBLIMATION GROWTH;

SILICON CARBIDE;

EQUILIBRIUM; TRANSPORT; VAPOR;

EID: 4243700699     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00442-5     Document Type: Article

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