Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 446-449

  Dmitriev, V ^a,b,c   Rendakova, S ^a,c   Kuznetsov, N ^c   Savkina, N ^c   Andreev, A ^c   Rastegaeva, M ^c   Mynbaeva, M ^c   Morozov, A ^d  

^a TDI Inc   (United States)

^b HOWARD UNIVERSITY   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d Crystal Growth Research Center   (Russian Federation)

Author keywords

Large area SiC devices; Micropipe density reduction; Micropipes; Power devices; Silicon carbide

Indexed keywords

MICROPIPES;

CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES;

SILICON CARBIDE;

EID: 0032668621     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00552-2     Document Type: Article

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