Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals

Journal of Crystal Growth

Volumn 233, Issue 1-2, 2001, Pages 211-218

  Bickermann, M ^a   Epelbaum, B M ^a   Hofmann, D ^a   Straubinger, T L ^a   Weingartner R ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A1. doping; A1. impurities; A1. segregation; A2. growth from vapor; B1. silicon carbide

Indexed keywords

BORON; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL IMPURITIES; LIGHT ABSORPTION; NITROGEN; PARAMAGNETIC RESONANCE; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON WAFERS; VANADIUM;

SEMI-INSULATING MATERIALS; TRANSFER COEFFICIENTS;

CRYSTAL GROWTH;

EID: 0035502051     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01579-2     Document Type: Article

References (18)

1. Electroluminiscense