Electronic structure of high-k transition-metal and rare-earth gate dielectrics for aggressively-scaled silicon devices

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 14-25

  Lucovsky, G ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS MATERIALS; ATOMS; CALCULATIONS; CHEMICAL BONDS; CHEMICAL STABILITY; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; MOLECULAR ORBITALS; ORBITS; PHASE SEPARATION; PROBABILITY DENSITY FUNCTION; RECONFIGURABLE HARDWARE; SILICATES; SILICON ALLOYS; SILICON OXIDES; SPECTROSCOPIC ANALYSIS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

ALTERNATIVE GATE DIELECTRICS; CRYSTALLINE DIELECTRIC; ELECTRONIC STRUCTURE CALCULATIONS; HIGH- K GATE DIELECTRICS; HYDROPHOBIC CHEMICALS; LOCAL ELECTRONIC STRUCTURES; PERFORMANCE LIMITATIONS; TRANSITION-METAL OXIDES;

GATE DIELECTRICS;

EID: 0037846891     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967540     Document Type: Conference Paper

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