Extending the reliability scaling limit of SiO2 through plasma nitridation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 545-548

  Nicollian, P E ^a   Baldwin, G C ^a   Eason, K N ^a   Grider, D T ^a   Hattangady, S V ^a   Hu, J C ^a   Hunter, W R ^a   Rodder, M ^a   Rotondaro, A L P ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRAPS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRATION; WEIBULL DISTRIBUTION;

PLASMA NITRIDATION;

SILICA;

EID: 0034454563     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

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