Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy

Journal of Applied Physics

Volumn 93, Issue 4, 2003, Pages 1933-1940

  Zhou, H ^a,c   Rupp, T ^b   Phillipp, F ^a   Henn, G ^b   Gross, M ^b   Ruhm A ^a   Schroder H ^b  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b GERMAN AEROSPACE CENTER DLR   (Germany)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; MICROSTRUCTURE; SAPPHIRE; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LASER INDUCED REACTIVE EPITAXY (LIRE);

FILM GROWTH;

EID: 0037442455     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1535257     Document Type: Article

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