Polarity selection in GaN films grown by laser induced reactive epitaxy

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 3, 2001, Pages 1065-1070

  Zhou, H ^a   Henn, G ^b   Gross, M ^b   Schroder H ^b   Phillipp, F ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b GERMAN AEROSPACE CENTER DLR   (Germany)

^c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013427939     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:3<1065::AID-PSSA1065>3.0.CO;2-R     Document Type: Article

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