Growth of GaN and AlN thin films by laser induced molecular beam epitaxy

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 16-19

  Gross, M ^a   Henn, G ^a   Schroder H ^a  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

AlN; GaN; Laser induced molecular beam epitaxy

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

LASER INDUCED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0002102990     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00201-8     Document Type: Article

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