Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 68, Issue 1, 1999, Pages 26-34

  Zhou, H ^a   Phillipp, F ^a   Gross, M ^b   Schroder H ^b  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DISLOCATIONS (CRYSTALS); FILM GROWTH; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BURGERS VECTORS; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033285659     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00332-3     Document Type: Article

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