Laser-induced reactive epitaxy of binary and ternary group III nitride heterostructures

Applied Surface Science

Volumn 186, Issue 1-4, 2002, Pages 429-434

  Rupp, T ^a   Henn, G ^a   Schroder H ^a  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

III V ratio; LIRE; Morphology; Polarity

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; HETEROJUNCTIONS; LASER ABLATION; LUMINESCENCE; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

LASER-INDUCED REACTIVE EPITAXY (LIRE);

THIN FILMS;

EID: 0037185093     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00778-4     Document Type: Conference Paper

References (8)