Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001)

Journal of Crystal Growth

Volumn 171, Issue 1-2, 1997, Pages 12-20

  Feiler, David ^a   Williams, R Stanley ^a   Talin, A Alec ^a   Yoon, Hojun ^a   Goorsky, Mark S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; PULSED LASER APPLICATIONS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE FILMS; GALLIUM NITRIDE FILMS; INDIUM NITRIDE FILMS; PULSED LASER DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0031546402     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00284-9     Document Type: Article

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