Rapid thermal annealing effect on crystalline yttria-stabilized zirconia gate dielectrics

Semiconductor Science and Technology

Volumn 18, Issue 2, 2003, Pages 154-157

  Wang, S J ^a   Ong, C K ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SILICON WAFERS; YTTRIUM COMPOUNDS; ZIRCONIA;

GATE DIELECTRICS;

DIELECTRIC DEVICES;

EID: 0037318616     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/316     Document Type: Article

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