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Volumn 144, Issue 11, 1997, Pages 3935-3939

The role of N2 in aspect-ratio-dependent etching of SiO2

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON TRANSPORT PROPERTIES; EMISSION SPECTROSCOPY; FLUOROCARBONS; HYDROCARBONS; ION EXCHANGE; NITROGEN; POLYMERIZATION; REACTIVE ION ETCHING;

EID: 0031268214     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838114     Document Type: Article
Times cited : (1)

References (18)
  • 3
    • 5844379312 scopus 로고
    • G. S. Mathad and D. W. Hess, Editors, PV 90-14, The Electrochemical Society Proceedings Series, Pennington, NJ
    • Y. H. Lee and Z. H. Zhou, in Plasma Processing, G. S. Mathad and D. W. Hess, Editors, PV 90-14, p. 45, The Electrochemical Society Proceedings Series, Pennington, NJ (1991).
    • (1991) Plasma Processing , pp. 45
    • Lee, Y.H.1    Zhou, Z.H.2
  • 5
    • 84975358589 scopus 로고
    • G. S. Mathad and D. W. Hess, Editors, PV 90-14, The Electrochemical Society Proceedings Series, Pennington, NJ
    • H. C. Jones, R. Bennett, and J. Singh, in Plasma Processing, G. S. Mathad and D. W. Hess, Editors, PV 90-14, p. 45, The Electrochemical Society Proceedings Series, Pennington, NJ (1991).
    • (1991) Plasma Processing , pp. 45
    • Jones, H.C.1    Bennett, R.2    Singh, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.