Model for etch depth dependence on GaAs via hole diameter

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 961-964

  Abraham Shrauner, Barbara ^a  

^a WASHINGTON UNIVERSITY IN ST LOUIS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23744440186     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590677     Document Type: Article

References (9)

1. K. J. Nordheden, X. D. Hua, Y. S. Lee, L. W. Yang, D. C. Streit, and H. C. Yen, J. Vac. Sci. Technol. B 17, 138 (1999).
2. L. A. D'Asaro, A. D. Butherus, J. V. DiLorenzo, D. E. Inglesias, and S. H. Wemple, in Proceedings of the Symposium on GaAs and Related Compounds, Vol. 56 in AIP Conf. Ser. (American Institute of Physics, New York, 1981), p. 267.
3. B. Abraham-Shrauner, J. Vac. Sci. Technol. B 17, 158 (1999).
4. A. Misaka and K. Harafuji, IEEE Trans. Electron Devices 44, 751 (1997).
5. H. Hübner and M. Engelhardt, J. Electrochem. Soc. 141, 2453 (1994).
6. J. F. O'Hanlon, A User's Guide to Vacuum Technology (Wiley, New York, 1989).
7. G. Lewin, Fundamentals of Vacuum Science Technology (McGraw-Hill, New York, 1965).
8. S. C. McNevin and M. Cerullo, J. Vac. Sci. Technol. A 16, 1514 (1998).
9. B. Abraham-Shrauner, IEEE Trans. Plasma Sci. 25, 433 (1997).