Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1043-1050

  Chinzei, Yasuhiko ^a   Ichiki, Takanori ^a   Ikegami, Naokatsu ^b   Feurprier, Yannick ^a   Shindo, Haruo ^c   Horiike, Yasuhiro ^a  

^a TOYO UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013178429     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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