SCOPUS 정보 검색 플랫폼

Volumn 195, Issue 1-4, 1998, Pages 1-5

Reconstructions of the GaAs (113) surface

(10) Pristovsek, M a Menhal, H a Wehnert, T a Zettler, J T a Schmidtling, T a Esser, N a Richter, W a Setzer, C b Platen, J b Jacobi, K b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

Author keywords

Arsenic desorption; GaAs (1 1 3) surface; LEED; MBE; MOVPE; RAS; Reconstruction

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; ARSENIC; DESORPTION; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032477067 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00695-2 Document Type: Article

Times cited : (14)

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