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Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 457-463

Atomic structure studies of (113)B GaAs surfaces grown by metallorganic vapor phase epitaxy

(3) Kawase, Makoto a Ishikawa, Yasuhiko a Fukui, Takashi a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE STRUCTURE; VACUUM TECHNOLOGY;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18844474131 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00101-9 Document Type: Article

Times cited : (12)

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