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Volumn 377-379, Issue , 1997, Pages 125-129

Geometrical and electronic structure of the MBE-prepared GaAs (113) A surface

Author keywords

Gallium arsenide; High index single crystal surfaces; Low energy electron diffraction; Molecular beam epitaxy; Photoemission; Surface core level shifts

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; ELECTRON RESONANCE; ELECTRONIC STRUCTURE; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; SURFACE PHENOMENA;

EID: 0031122754     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01377-5     Document Type: Article
Times cited : (15)

References (13)
  • 6
    • 30244466498 scopus 로고
    • PhD Thesis, Technische Universität Berlin
    • A compilation of data can be found in S.M. Scholz, PhD Thesis, Technische Universität Berlin, 1995.
    • (1995)
    • Scholz, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.