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Volumn 377-379, Issue , 1997, Pages 125-129
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Geometrical and electronic structure of the MBE-prepared GaAs (113) A surface
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Author keywords
Gallium arsenide; High index single crystal surfaces; Low energy electron diffraction; Molecular beam epitaxy; Photoemission; Surface core level shifts
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Indexed keywords
BAND STRUCTURE;
CRYSTAL ORIENTATION;
ELECTRON RESONANCE;
ELECTRONIC STRUCTURE;
LOW ENERGY ELECTRON DIFFRACTION;
MOLECULAR BEAM EPITAXY;
PHOTOEMISSION;
SINGLE CRYSTALS;
SPECTROSCOPIC ANALYSIS;
SURFACE PHENOMENA;
ANGLE RESOLVED VALENCE BAND PHOTOEMISSION;
HIGH INDEX SINGLE CRYSTAL SURFACES;
SURFACE CORE LEVEL SHIFTS;
SURFACE CORE LEVEL SPECTROSCOPY;
SURFACE RECONSTRUCTION;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0031122754
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(96)01377-5 Document Type: Article |
Times cited : (15)
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References (13)
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