Atomic structure of the stoichiometric GaAs(114) surface

Physical Review Letters

Volumn 86, Issue 1, 2001, Pages 115-118

  Marquez J ^a   Kratzer, P ^a   Geelhaar, L ^a   Jacobi, K ^a   Scheffler, M ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL ATOMIC STRUCTURE; DIMERS; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACIAL ENERGY; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; SURFACES;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035121253     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.115     Document Type: Article

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