Comparative study of the GaAs (113), (115), (001), (1̄1̄5̄), (1̄1̄3̄), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy

Microelectronics Journal

Volumn 30, Issue 4, 1999, Pages 449-453

  Pristovsek, Markus ^a   Menhal, H ^a   Schmidtling, T ^a   Esser, N ^a   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DESORPTION; LIGHT REFLECTION; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032681265     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00151-7     Document Type: Article

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