Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates

Nature

Volumn 392, Issue 6671, 1998, Pages 56-59

  Nötzel, Richard ^a   Niu, Zhlchuan ^a   Ramsteiner, Manfred ^a   Schönherr, Hans Peter ^a   Tranpert, Achim ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NANOPARTICLE;

ARTICLE; LUMINESCENCE; OPTICS; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS;

EID: 0042424050     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/32127     Document Type: Article

References (15)

1. Eberl, K., PetrofF, P. M. & Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (NATO Advanced Sci. Inst. Ser. E., Vol. 298, Kluwer, Dordrecht, 1995).
2. Hess, H. F., Betzig, E., Harris, T. D., Pfeiffer, L. N. & West, K. W. Near-field spectroscopy of the quantum constituents of a luminescent system. Science 264, 1740-1745 (1994).
3. Brunner, K., Abstreiter, G., Böhm, G., Tränkle, G. & Weimann, G. Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure. Phys. Rev. Lett. 73, 1138-1141 (1994).
4. Gammon, D., Snow, E. S., Shanbrook, B. V., Kratzer, D. S. & Park, D. Homogeneous linewidths in the optical spectrum of a single gallium arsenide quantum dot. Science 273, 87-90 (1996).
5. Ramsteiner, M. et al. Influence of composition fluctuations in Al(Ga)As barriers on the exciton localization in thin GaAs quantum wells. Phys. Rev. B 55, 5239-5242 (1997).
6. Leon, R., Petroff, P. M., Leonard, D. & Fafard, S. Spatially resolved visible luminescence of self-assembled semiconductor quantum dots. Science 267, 1966-1968 (1995).
7. Marzin, J.-Y., Gerard, J.-M., Izrael, A., Barrier, D. & Bastard, G. Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs. Phys. Rev. Lett. 73, 716-719 (1994).
8. Nötzel, R. et al. Selectivity of growth on patterned GaAs (311) A substrates. Appl. Phys. Lett. 68, 1132-1134 (1996).
9. Richter, A. et al. Real-space transfer and trapping of carriers into single GaAs quantum wires studied by near-field optical spectroscopy. Phys. Rev. Lett. 79, 2145-2148 (1997).
10. Nötzel, R., Temmyo, J. & Tammamura, T. Tunability of one-dimensional self-faceting on GaAs (311 ) A surfaces by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 64, 3557-3559 (1994).
11. Nötzd, R., Ledentsov, N., Däweritz, L., Hohenstein, M. & Ploog, K. Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces. Phys. Rev. Lett. 67, 3812-3815 (1991).
12. Okada, Y., Fujita, T. & Kawabe, M. Growth modes in atomic hydrogen assisted molecular beam epitaxy of GaAs. Appl. Phys. Lett. 67, 676-678 (1995).
13. Okada, Y. & Harris, J. S. Jr Basic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactant. J. Vac. Sci. Technol. B 14, 1725-1728 (1996).
14. Miyamoto, Y. & Nonoyama, S. First principles calculation of molecular- and atomic hydrogen reactions on As-terminated GaAs (100) surfaces. Phys. Rev. B 46, 6915-6921 (1992).
15. Gossmann, H. J., Sinden, F. W. & Feldman, L. C. Evolution of terrace size distributions during thin-film growth by step mediated epitaxy. J. Appl. Phys. 67, 745-752 (1990).