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Volumn 16, Issue 4, 1998, Pages 2373-2380

Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation

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EID: 0000548855     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590177     Document Type: Article
Times cited : (53)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.