Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope

Applied Physics Letters

Volumn 72, Issue 18, 1998, Pages 2265-2267

  Hasegawa, Y ^a   Kiyama, H ^a   Xue, Q K ^a   Sakurai, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THREE DIMENSIONAL;

ATOMIC STRUCTURE MODEL; THREE DIMENSIONAL ISLAND STRUCTURE;

CRYSTAL ATOMIC STRUCTURE;

EID: 0032072852     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121273     Document Type: Article

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