GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 288-291

  Nikolaev, A E ^a   Rendakova, S V ^a   Nikitina, I P ^b   Vassilevski, K V ^b,c   Dmitriev, V A ^c,d  

^a Crystal Growth Research Center   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TDI Inc   (United States)

^d HOWARD UNIVERSITY   (United States)

Author keywords

(GaN); Gallium nitride; Hydride vapor phase epitaxy (HVPE); Liquid phase epitaxy (LPE); Pn heterojunction; Silicon carbide

Indexed keywords

EID: 0005482213     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0401-z     Document Type: Article

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