Interfacial effects during GaN growth on 6H-SiC

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 234-239

  Torvik, J T ^a   Leksono, M W ^a   Pankove, J I ^a   Heinlein, C ^b   Grepstad, J K ^b   Magee, C ^c  

^a Astralux Inc   (United States)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^c Evans East   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; VOLTAGE MEASUREMENT;

GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0032634980     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0020-3     Document Type: Article

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