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Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 196-199

Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

(4) Luther, B P a Mohney, S E a Delucca, J M a Karlicek Jr , R F b

a PENNSYLVANIA STATE UNIVERSITY (United States)

b EMCORE CORPORATION (United States)

Author keywords

Gallium nitride (GaN); Ohmic contacts

Indexed keywords

EID: 0001230666 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-998-0386-7 Document Type: Article

Times cited : (36)

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