|
|
Volumn 482, Issue , 1997, Pages 911-916
|
|
Band offsets in GaN/AlN and AlN/SiC heterojunctions
a
a
EPFL
(Switzerland)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
BAND STRUCTURE;
COMPUTATIONAL METHODS;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
NITRIDES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SILICON CARBIDE;
STOICHIOMETRY;
STRAIN;
STRESS RELAXATION;
ALUMINUM NITRIDE;
GALLIUM NITRIDE;
PSEUDOPOTENTIAL METHOD;
HETEROJUNCTIONS;
|
|
EID: 0031365598
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-482-911 Document Type: Conference Paper |
|
Times cited : (4)
|
|
References (16)
|
