GaN/SiC heterojunction bipolar transistors

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1229-1233

  Torvik, J T ^a   Pankove, J I ^a   Zeghbroeck, B Van ^b  

^a Astralux Inc   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ENERGY GAP; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

GALLIUM NITRIDE; PARASITIC DEEP DEFECT LEVEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033734305     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00033-2     Document Type: Article

References (14)

1. Pensl G, Morkoc H, Monemar B, Janzen E, editors. Proc Seventh Int Conf on SiC, III-nitrides and related materials. Enfield, USA: Trans Tech Publications.
2. Capano MA, Trew RJ, editors. Mat Res Soc Bull 1997;22(3):19-56.
3. Pankove JI, Moustakas TD, editors. Semiconductors and semimetals, vol. 50. Gallium Nitride (GaN) I. New York: Academic Press, 1997.
4. Pankove JI, Moustakas TD, editors. Semiconductors and semimetals, vol. 57. Gallium Nitride (GaN) II. New York: Academic Press, 1998.
5. McCartney L, Kozodoy P, Rodwell M, DenBaars S, Mishra U. Comp Semicond 1998;4(8).
6. Torvik JT, Leksono MW, Pankove JI, Heinlein C, Grepstad J, Magee C. J Electron Mat 1999;28(3):237-9.
7. Torvik J.T., Leksono M.W., Pankove J.I., Van Zeghbroeck B., Ng H.M., Moustakas T.D. Appl Phys Lett. 72:1998;1371.
8. Kuznetsov N.I., Gubenco A.E., Nicolaev A.E., Melnik Yu.V., Blashenkov M.N., Nikitina I.P., Dmitriev V.A. Mater Sci Engineering. B46:1997;74.
9. Pankove JI, Chang SS, Lee HC, Molnar R, Moustakas TD, Van Zeghbroeck B. Proc IEDM, San Francisco, CA, 1994. p. 389-92.
10. Pankove JI, Leksono M, Chang SS, Walker C, Van Zeghbroeck B. MRS Internet J 1996;1(39).
11. Torvik J.T., Qiu C.-.H., Leksono M., Pankove J.I. Appl Phys Lett. 72:1998;945.
12. Sze SM. Physics of semiconductor devices. New York: Wiley, 1981. p. 140-4.
13. Y. Kato, S. Kitamura, K. Hiramatsu, N. Sawaki, J. Cryst Growth 1994;144:133-14.
14. S.S. Chang, PhD thesis, University of Colorado, 1996.