Electrical characteristics of GaN/6H-SiC n-p heterojunctions

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 74-78

  Kuznetsov, N I ^a   Gubenco, A E ^a   Nikolaev, A E ^a   Melnik, Yu V ^a   Blashenkov, M N ^a   Nikitina, I P ^a   Dmitriev, V A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Anisotypic n p heterojunction; Gallium nitride; Interface traps; Silicon carbide

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRONIC PROPERTIES; FILM GROWTH; HYDROGEN; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0031122345     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01977-0     Document Type: Article

References (20)

1. J.A. Edmond, D.G. Waltz, S. Brueckher, H.G. Kong, J.W. Palmour and C.H. Carter Jr, in Proc. 1st Int. High Temperature Electroplating Conf., D.B. King and F.V. Thome (eds.), Sandia National Labs., Albuquerque, NM, 1991, 500 pp.
2. P.G. Neudeck, D.J. Larkin, J.A. Powell and L.G. Matus, IEEE Trans. Electron. Devices, 40 (1993) 2130.
3. P.G. Neudeck, D.J. Larkin, J.A. Powell and L.G. Matus, Appl. Phys. Lett., 64 (1994) 1386.
4. J. W. Palmour, L.A. Lipkin, in Trans. 2nd Int. High Temperature Electronics Conf., D.B. King and F.V. Thome (eds.), Sandia National Labs., Charlotte, NC, 1994, pp. XI-3.
5. F.A. Ponce, B.S. Krusor, J.S. Major Jr, W.E. Plano and D.F. Welch. Appl. Phys. Lett., 67 (1995) 410.
6. T. Lei, M. Fancinlli, R.J. Molnar, T.D. Moustakas, R.J. Graham and J. Scanlon, Appl. Phys. Lett., 59 (1991) 944.
7. H.P. Maruska and J.J. Tietjen, Appl. Phys. Lett., 15 (1969) 327.
8. Yu.V. Melnik, I.P. Nikitina, A.S. Zubrilov, A.A. Sitnikova, Yu.G. Musikhin and V.A. Dmitriev, Inst. Phys. Conf., Series 142 (1996) 863.
9. D. Karakakis, A. Sampath, I.D. Goepfert and T.D. Moustakas, Materials Research Society Symp. Proc., MRS, Boston, 1995.
10. R.L. Anderson, Solid-State Electron., 5 (1962) 341.
11. E.V. Kalinina, N.I. Kuznetsov, V.A. Dmitriev, K.G. Irvine and C.H. Carter Jr, J. Electron. Mater., 25 (1996) 831.
12. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns. J. Appl. Phys., 76 (1994) 1363.
13. G.A. Slack and R.I. Scace, J. Chem. Phys., 42 (1965) 805.
14. A.E. Nikolaev, Yu.V. Melnik, M.N. Blashenkov, N.I. Kuznetsov, I.P. Nikitina, A.S. Zubrilov, D.V. Tsvetkov, I. Nikolaev and V.A. Dmitriev, MRS Internet J. Nitride Semicond. Res., to be published.
15. A.R. Riben and D.L. Feucht, Solid-State Electron., 9 (1966) 1055.
16. B.L. Sharma and R.K, Purohit, Semiconductor Heterojunction, Pergamon, Oxford, 1974, 20 pp.
17. R. Mach, W. Ludwing, G. Eichhorn and H. Arnold, Phys. State Solid (a), 2 (1970) 701.
18. J.P. Donnelly and A.G. Milnes, IEEE Trans. Electron. Dev., ED-14 (1967) 63.
19. D.V. Lang, J. Appl. Phys., 45 (1974) 3023.
20. N.I. Kuznetsov, Semiconductors, 27 (1993) 925.