Electron mobility of n-type GaN films

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 507-512

  Ng, H M ^a   Doppalapudi, D ^a   Singh, R ^a   Moustakas, T D ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ELECTRON CYCLOTRON RESONANCE; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ELECTRON MOBILITY; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031377059     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-507     Document Type: Conference Paper

References (9)