UHV study of hydrogen atom induced etching of amorphous hydrogenated silicon thin films

Journal of Physical Chemistry B

Volumn 105, Issue 17, 2001, Pages 3502-3509

  Zechcjf, Thomas ^a   Brandnei, Birgit D ^a   Biener, Jürgen ^b   Küppers, Jürgen ^a,b  

^a UNIVERSITY OF BAYREUTH   (Germany)

^b MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS HYDROGENATED SILICON; DISILANE; ELECTRONIC ENERGY LOSS SPECTROSCOPY; VIBRATIONAL ELECTRON ENERGY LOSS SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ETCHING; HIGH TEMPERATURE EFFECTS; HYDROGEN; ION BEAM ASSISTED DEPOSITION; MOLECULAR STRUCTURE; MOLECULAR VIBRATIONS; PLATINUM; SILANES; THIN FILMS; ULTRAHIGH VACUUM;

AMORPHOUS SILICON;

EID: 0037013362     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0022611     Document Type: Article

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