Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films

Journal of Physical Chemistry B

Volumn 101, Issue 46, 1997, Pages 9537-9547

  Chiang, C M ^a   Gates, S M ^a   Lee, Szetsen S ^b   Kong, M ^b   Bent, Stacey F ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b NEW YORK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; DEUTERIUM; ETCHING; FILM GROWTH; FILM PREPARATION; INFRARED SPECTROSCOPY; REACTION KINETICS; SEMICONDUCTING SILICON; SILANES; SURFACE PHENOMENA; THERMAL EFFECTS;

ABSTRACTION REACTIONS; INSERTION REACTIONS;

SEMICONDUCTING FILMS;

EID: 0031273619     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp963717a     Document Type: Article

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