SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 402-404, Issue , 1998, Pages 52-56

Stable Ge-H phase at 620 K on Si1-xGex/Si(001) surface: A high-resolution electron energy loss spectroscopy study

(2) Angot, T a Chelly, R a

a UNIVERSITÉ DE HAUTE ALSACE (France)

Author keywords

Chemical vapor Deposition; Chemisorption; Electron energy loss spectroscopy; Germanium; Hydrogen; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; GAS ADSORPTION; HYDROGEN; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILANES;

HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; HOT WIRE TECHNIQUE;

HETEROJUNCTIONS;

EID: 0031627981 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)01018-2 Document Type: Article

Times cited : (8)

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