Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 133-137

  Kessels, W M M ^a   Severens, R J ^a   Van De Sanden, M C M ^a   Schram, D C ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

a Si:H; Hydrogen incorporation; Temperature

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CHEMISORPTION; COMPOSITION EFFECTS; CROSSLINKING; DEPOSITION; FILM GROWTH; HYDROGEN; HYDROGENATION; REFRACTIVE INDEX; THERMAL EFFECTS;

SILYL RADICALS; THERMAL PLASMA;

AMORPHOUS SILICON;

EID: 0032068764     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00028-3     Document Type: Article

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