Reaction of atomic hydrogen with hydrogenated porous silicon - Detection of precursor to silane formation

Surface Science

Volumn 348, Issue 3, 1996, Pages 325-334

  Glass Jr , John A ^a   Wovchko, Edward A ^a   Yates Jr , John T ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Chemisorption; Etching; Hydrogen; Infrared absorption spectroscopy; Silicon

Indexed keywords

CHEMISORPTION; CRYOGENICS; DEUTERIUM; ETCHING; HYDROGEN; INFRARED SPECTROSCOPY; POROUS SILICON; SILANES; SURFACES; TEMPERATURE;

ATOMIC DEUTERIUM; ATOMIC HYDROGEN; DISPROPORTIONATION; PRECURSOR; WARMING;

CHEMICAL REACTIONS;

EID: 0030105840     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01014-9     Document Type: Article

References (35)

1. Y.J. Chabal, G.S. Higashi, K. Raghavachari and V.A. Burrows, J. Vac. Sci. Technol. A. 7 (1989) 2104.
2. M. Niwano, Y. Kimura and N. Miyamoto, Appl. Phys. Lett. 65 (1994) 1692.
3. M. Niwano, J. Kageyama, K. Kurita, K. Kinashi, I. Takahashi and N. Miyamoto, J. Appl. Phys. 76 (1994) 2157.
4. C.C. Cheng and J.T. Yates, Jr., Phys. Rev. B 43 (1991) 4041.
5. D.D. Koleske, S.M. Gates and J.A. Schultz, J. Chem. Phys. 99 (1993) 5619.
6. Y.J. Chabal and K. Raghavachari, Phys. Rev. Lett. 54 (1985) 1055.
7. C.M. Greenlief, S.M. Gates and P.A. Holbert, J. Vac. Sci. Technol. A 7 (1989) 1845.
8. D.R. Olander, M. Balooch, J. Abrefah and W.J. Siekhaus, J. Vac. Sci. Technol. B 5 (1987) 1404.
9. H. Kobayashi, K. Edamoto, M. Onchi and M. Nishijima, J. Chem. Phys. 78 (1983) 7429.
10. C.T. Kao, L.H. Dubois and R.G. Nuzzo, J. Vac. Sci. Technol. A 9 (1991) 228.
11. H. Wagner, R. Butz, U. Backes and D. Bruchmann, Solid State Commun. 38 (1981) 1155.
12. P.J. Chen, M.L. Colaianni and J.T. Yates, Jr., J. Appl. Phys. 70 (1991) 2954.
13. K. Sinniah, M.G. Sherman, L.B. Lewis, W.H. Weinberg, J.T. Yates, Jr. and K.C. Janda, J. Chem. Phys. 92 (1990) 5700.
14. M.J. Bozack, W.J. Choyke, L. Muehlhoff and J.T. Yates, Jr., J. Appl. Phys. 60 (1986) 3750.
15. S.M. Gates, R.R. Kunz and C.M. Greenlief, Surf. Sci. 207 (1989) 364.
16. J. Abrefah and D.R. Olander, Surf. Sci. 209 (1989) 291.
17. K. Okamoto, M. Shinohara, T. Yamanishi, S. Miyazaki and M. Hirose, Appl. Surf. Sci. 79/80 (1994) 57.
18. W.X. Zhu, X.Y. Gao, L.Z. Zhang, J.C. Mao, B.R. Zhang, J.Q. Duan and G.G. Qin, Superlatt. Microstruct. 12 (1992) 409.
19. P. Gupta, V.L. Colvin and S.M. George, Phys. Rev. B 37 (1988) 8234.
20. Y. Hamakawa Ed., Japan Annual Reviews in Electronics Computers and Telecommunications: Amorphous Semiconductor Technologies and Devices 1982 (North-Holland, New York, 1981) pp. 62-65.
21. M.H. Brodsky, Ed., Properties of Amorphous Silicon, (INSPEC - EMIS Data Reviews no. 1, 1985) pp. 4.1-4.12.
22. A. Madan and M.P. Shaw, The Physics and Applications of Amorphous Semiconductors (Academic Press, New York, 1988) pp. 30-35.
23. P. John, I.M. Odeh and M.J.K. Thomas, Solid State Commun. 41 (1982) 341.
24. H. Wagner and W. Beyer, Solid State Commun. 48 (1983) 585.
25. T. Imura, K. Mogi, A. Hiraki, S. Nakashima and A. Mitsuishi, Solid State Commun. 40 (1981) 161.
26. G. Lucovsky, S.S. Chao, J. Yang, J.E. Tyler and W. Czubatyl, J. Vac. Sci. Technol. A 2 (1984) 353.
27. M.H. Brodsky, M. Cardona and J.J. Cuomo, Phys. Rev. B 16 (1977) 3556.
28. P. John, I.M. Odeh, M.J.K. Thomas, M.J. Tricker and J.I.B. Wilson, Phys. Status Solidi 105 (1981) 499.
29. G. Lucovsky, Solid State Commun, 29 (1979) 571.
30. J.A. Glass, Jr., E.A. Wovchko and J.T. Yates, Jr., Surf. Sci. 338 (1995) 125.
31. W. Kern and D.A. Puotinen, RCA Rev. 31 (1970) 187.
32. P. Basu, T.H. Ballinger and J.T. Yates, Jr., Rev. Sci. Instrum. 59 (1988) 1321.
33. A. Venkateswara Rao, F. Ozanam and J.N. Chazalviel, J. Electrochem. Soc. 138 (1991) 153.
34. G. Lucovsky, J. Vac. Sci. Technol. 16 (1979) 1225.
35. R.E. Wilde, K.K. Srinivasan, R.W. Harral and S.G. Sankar, J. Chem. Phys. 55 (1971) 5681.