Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2485-2489

  Trusso, S ^a   Barreca, F ^b   Neri, F ^b  

^a CNR   (Italy)

^b UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BONDING CONFIGURATIONS; CARBON BOND; ELLIPSOMETRIC DATA; MULTIPLE LAYERS; NITROGEN ATMOSPHERES; NITROGEN CONTENT; NITROGEN PARTIAL PRESSURES; PHOTOELECTRON PEAKS; SI-SI BONDS; SILICON ATOMS; XPS MEASUREMENTS;

CHEMICAL BONDS; NITROGEN; OPTICAL BAND GAPS; OPTICAL PROPERTIES; PHOTOELECTRONS; SILICON CARBIDE; SINTERING; SPECTROSCOPIC ELLIPSOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 0036733766     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498885     Document Type: Article

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