SiCN thin film prepared at room temperature by r.f. reactive sputtering

Applied Surface Science

Volumn 185, Issue 3-4, 2002, Pages 262-266

  Wu, X C ^a   Cai, R Q ^a   Yan, P X ^a   Liu, W M ^b   Tian, J ^b  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

r.f. reactive sputtering; Room temperature; SiCN thin film

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CROSSLINKING; ELECTRIC CONDUCTIVITY; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; SILICON COMPOUNDS; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY;

REACTIVE SPUTTERING; WAVE NUMBERS;

THIN FILMS;

EID: 0037080394     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00820-0     Document Type: Article

References (16)